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Al2O3 crystal substrate

have good thermal, electrical, dielectric, corrosion resistant and high temperature properties, and it has also good thermal conductivity, high hardness, infrared transparency and chemical stability and widely used as high-temperature infrared window materials, it is also excellent substrate materials for III-V nitride and some epitaxial Superconducting thin films.
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Crystal structure	hexagonal(a=4.758Å,c=12.992Å)
Density	3.98g/cm3
purity	Udoped(99.9999%),lightly doped and heavily doped
Dielectric constant	～9.4(300k) at A axis, ～11.58(300k) at C axis
Orientation	C,R,A,M±0.5o
Size	10×10×0.5 mm, 0.5″×0.5″×0.5mm Φ1″×0.5 mm, Φ2″×0.5 mm,Φ3″×0.5 mm
Polished	One side or double side polished
Surface roughness	≤5Å
Package	100 clean bags, single or multi-chip wafer box