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  • Al2O3 crystal substrate

Al2O3 crystal substrate

  • have good thermal, electrical, dielectric, corrosion resistant and high temperature properties, and it has also good thermal conductivity, high hardness, infrared transparency and chemical stability and widely used as high-temperature infrared window materials, it is also excellent substrate materials for III-V nitride and some epitaxial Superconducting thin films.
  • INQUIRY

Crystal structure

hexagonal(a=4.758Å,c=12.992Å)

Density

3.98g/cm3

purity

Udoped(99.9999%),lightly doped and heavily doped

Dielectric constant

9.4(300k) at A axis, 11.58(300k) at C axis

Orientation

C,R,A,M±0.5o

Size

10×10×0.5 mm, 0.5″×0.5″×0.5mm Φ1″×0.5 mm, Φ2″×0.5 mm,Φ3″×0.5 mm

Polished

One side or double side polished

Surface roughness

≤5Å

Package

100 clean bags, single or multi-chip wafer box




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